Ion Milling
Ion milling is a technique for subtracting materials from a sample. This is achieved by bombarding the sample with argon, causing the atoms on the surface of the sample to vaporize. This technique can remove materials at a rate of up to 1 [nm/s].
KRI KDC75
| Description | Specification |
|---|---|
| Sample Size | 3" Wafer or 4" Wafer or Custom Size |
| Mill Rate | 0 to 2 [nm/s] |
| Beam Energy | 0 to 600 [V] |
| Beam Current Density | 0 to 20 [W/cm2] |
| Uniformity | < 2% |
| Sample Distance | 30 [cm] |
Core Technology
| Core Technology | Description |
|---|---|
| SOP: KRI KDC75 | This document is the standard operating procedure (SOP) for the KRI KDC75 ion mill system at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time. |
| SSP: KRI KDC75 | This is a service manual we developed for the KRI KDC75 ion mill system at UHNF. This document ensures that any staff can effectively perform routine service or repairs effectively, quickly and at significantly lower cost. This document is restricted to equipment custodians. Contact us for access. |
| Uniformity | The ion mill uniformity is approximately 3% across a 4" Wafer |
| Sample Heating | This ion mill does not have sample cooling. A 4" Silicon Wafer will heat up to 260 C in just a minute of processing. |
Guide
| Guide | Description |
|---|