Reaction Ion Etching

Reactive ion etching is a technique for removing material from a sample. This is achieved by ionizing a reactive gas and directing it towards the sample surface. A chemical reaction between the reactive gas and the sample material produces a byproduct that evaporates away. This technique can etch very specific materials depending on the reactive gases available.

Oxford Instrument Plasmalab System 100 ICP

DescriptionSpecification
Sample100 [mm] Wafer or
Custom size
GasesAr, O2, CHF3, SF6, C4F8, H2
RF Power0 to 300 [W]
ICP Power0 to 1500 [W]
Temperature-150 [°C] to 50 [°C]
Helium Backside CoolingYes
Bosch ProcessYes

Oxford Instrument Plasmalab System 100

DescriptionSpecification
Sample100 [mm] Wafer or
Custom size
GasesAr, O2
RF Power0 to 300 [W]
Temperature18 [°C]

Oxford Instrument Plasmalab System 80

DescriptionSpecification
Sample100 [mm] Wafer or
Custom size
GasesAr, O2, CF4, CHF3, SF6
RF Power0 to 300 [W]
Temperature18 [°C]

Core Technology

Core TechnologyDescription
SOP: RIE180This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time.
SOP: RIE100This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 100 (RIE100) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time.
SOP: RIE80This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 80 (RIE80) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time.
SiO2:HSQThermal silicon dioxide (SiO2) and HSQ have very similar chemical composition. This process etches SiO2 and HSQ at approximately the same rate.
PMMA:HSQPMMA and HSQ have very different chemical composition. This process etches PMMA, but does not appear to etch HSQ. The lateral etch of PMMA is also characterize to control the undercut depth.
Si:AZ1512Silicon (Si) and AZ1512 have very different chemical composition. This Bosch process etches Si 30 times faster than AZ1512.
Si:AZ1512 PostSilicon (Si) and AZ1512 have very different chemical composition. This document the process development steps taken to produce 7 [µm] diameter and 50 [µm] tall silicon posts.
SiO2:CrThis process etches SiO2 and Cr at a rate of 377 and 6.9 [nm/min] respectively.
SiO2:HSQThis process etches SiO2 and HSQ at a rate of 126 and 204 [nm/min] respectively.
SiO2:PMMAThis process etches SiO2 and PMMA at a rate of 29 and 29 [nm/min] respectively.
SiO2:mrI7000RThis process etches SiO2 and mrI7000R at a rate of 25 and 12 [nm/min] respectively.
SiO2:AZ1512This process etches SiO2 and AZ1512 at a rate of 45 and 13 [nm/min] respectively.
Si:AZ1512This process etches Si and AZ1512 at a rate of 2858 and 325 [nm/min] respectively.
Si:PMMAThis process etches Si and PMMA at a rate of 330 and 156 [nm/min] respectively.
PMMAThis process etches PMMA at a rate of 70 [nm/min]
mrI7000RThis process etches mrI7000R at a rate of 64 [nm/min]
NXR1025This process etches NXR1025 at a rate of 55 [nm/min]
Anti-Stick CoatingThis process deposits an anti-stick coating
Photoresist Adhesion PromotionThis process dehydrates the surface of a silicon wafer to improve photoresist adhesion
SSP: RIE180This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access.
SSP: RIE100This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 100 (RIE100) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access.
SSP: RIE80This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 80 (RIE80) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access.

Guide

GuideDescription
Process DevelopmentLearn how to develop a robust nanoimprint process and contribute towards making nanofabrication technology more accessible.
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