Reaction Ion Etching
Reactive ion etching is a technique for removing material from a sample. This is achieved by ionizing a reactive gas and directing it towards the sample surface. A chemical reaction between the reactive gas and the sample material produces a byproduct that evaporates away. This technique can etch very specific materials depending on the reactive gases available.
Oxford Instrument Plasmalab System 100 ICP
| Description | Specification |
|---|---|
| Sample | 100 [mm] Wafer or Custom size |
| Gases | Ar, O2, CHF3, SF6, C4F8, H2 |
| RF Power | 0 to 300 [W] |
| ICP Power | 0 to 1500 [W] |
| Temperature | -150 [°C] to 50 [°C] |
| Helium Backside Cooling | Yes |
| Bosch Process | Yes |
Oxford Instrument Plasmalab System 100
| Description | Specification |
|---|---|
| Sample | 100 [mm] Wafer or Custom size |
| Gases | Ar, O2 |
| RF Power | 0 to 300 [W] |
| Temperature | 18 [°C] |
Oxford Instrument Plasmalab System 80
| Description | Specification |
|---|---|
| Sample | 100 [mm] Wafer or Custom size |
| Gases | Ar, O2, CF4, CHF3, SF6 |
| RF Power | 0 to 300 [W] |
| Temperature | 18 [°C] |
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Core Technology
| Core Technology | Description |
|---|---|
| SOP: RIE180 | This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time. |
| SOP: RIE100 | This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 100 (RIE100) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time. |
| SOP: RIE80 | This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 80 (RIE80) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time. |
| SiO2:HSQ | Thermal silicon dioxide (SiO2) and HSQ have very similar chemical composition. This process etches SiO2 and HSQ at approximately the same rate. |
| PMMA:HSQ | PMMA and HSQ have very different chemical composition. This process etches PMMA, but does not appear to etch HSQ. The lateral etch of PMMA is also characterize to control the undercut depth. |
| Si:AZ1512 | Silicon (Si) and AZ1512 have very different chemical composition. This Bosch process etches Si 30 times faster than AZ1512. |
| Si:AZ1512 Post | Silicon (Si) and AZ1512 have very different chemical composition. This document the process development steps taken to produce 7 [µm] diameter and 50 [µm] tall silicon posts. |
| SiO2:Cr | This process etches SiO2 and Cr at a rate of 377 and 6.9 [nm/min] respectively. |
| SiO2:HSQ | This process etches SiO2 and HSQ at a rate of 126 and 204 [nm/min] respectively. |
| SiO2:PMMA | This process etches SiO2 and PMMA at a rate of 29 and 29 [nm/min] respectively. |
| SiO2:mrI7000R | This process etches SiO2 and mrI7000R at a rate of 25 and 12 [nm/min] respectively. |
| SiO2:AZ1512 | This process etches SiO2 and AZ1512 at a rate of 45 and 13 [nm/min] respectively. |
| Si:AZ1512 | This process etches Si and AZ1512 at a rate of 2858 and 325 [nm/min] respectively. |
| Si:PMMA | This process etches Si and PMMA at a rate of 330 and 156 [nm/min] respectively. |
| PMMA | This process etches PMMA at a rate of 70 [nm/min] |
| mrI7000R | This process etches mrI7000R at a rate of 64 [nm/min] |
| NXR1025 | This process etches NXR1025 at a rate of 55 [nm/min] |
| Anti-Stick Coating | This process deposits an anti-stick coating |
| Photoresist Adhesion Promotion | This process dehydrates the surface of a silicon wafer to improve photoresist adhesion |
| SSP: RIE180 | This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access. |
| SSP: RIE100 | This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 100 (RIE100) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access. |
| SSP: RIE80 | This document is the standard service procedure (SSP) for the Oxford Instrument Plasmalab System 80 (RIE80) at UHNF. This SSP ensures that any staff can effectively perform routine service or repairs correctly, the first time. This document is restricted to equipment custodians. Contact us for access. |
Guide
| Guide | Description |
|---|---|
| Process Development | Learn how to develop a robust nanoimprint process and contribute towards making nanofabrication technology more accessible. |