Electron beam lithography is a technique capable of producing patterns minimum features below 10 [nm]. This is achieved by focusing a beam of electrons into a tiny spot and scanning the beam to expose a pattern on a electron sensitive media. The exposed pattern produces structural contrast in the media after development. Electron beam lithography can be performed using a scanning electron microscope, but it is typically better to use an electron beam writer which is designed to provide faster print speed with higher resolution while requiring significantly less training.