Reaction Ion Etching

Reactive ion etching is a technique for removing material from a sample. This is achieved by ionizing a reactive gas and directing it towards the sample surface. A chemical reaction between the reactive gas and the sample material produces a byproduct that evaporates away. This technique can etch very specific materials depending on the reactive gases available.

Oxford Instrument Plasmalab System 100 ICP

DescriptionSpecification
Sample100 [mm] Wafer or
Custom size
GasesAr, O2, CHF3, SF6, C4F8, H2
RF Power0 to 300 [W]
ICP Power0 to 1500 [W]
Temperature-150 [°C] to 50 [°C]
Helium Backside CoolingYes
Bosch ProcessYes

Core Technology

Core TechnologyDescription
SOP: RIE180This document is the standard operating procedure (SOP) for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This SOP serves as a foundation for initial training and ensures that the equipment can be operated correctly, by everyone, the first time.
SSP: RIE180This is a service manual we developed for the Oxford Instrument Plasmalab System 100 ICP (RIE180) at UHNF. This document ensures that any staff can effectively perform routine service or repairs effectively, quickly and at significantly lower cost. This document is restricted to equipment custodians. Contact us for access.
ProcessesThe Process Viewer is a searchable datable of all processes at UHNF. This database is used to often complete new projects during the first run.